| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| 1N5402 | 200V; 3.0A rectifier; high current capability and low forward voltage drop | distributor | - | 2 | -65°C | 175°C | 62 K |
| 1N5402 | 200 V, 3 A, plastic silicon rectifier | distributor | DO | 2 | -65°C | 175°C | 126 K |
| 1N5402 | 200 V, 3 A general diode | distributor | DO | 2 | - | - | 49 K |
| 1N5402 | 3.0A, 200V ultra fast recovery rectifier | distributor | - | - | - | - | 78 K |
| 1N5402 | 200 V, 3.0 A silicon rectifier | distributor | DO | 2 | -65°C | 125°C | 121 K |
| 1N5402 | 200 V, 3 A, high current plastic silicon rectifier | distributor | DO | 2 | -55°C | 150°C | 155 K |
| 1N5402G | 200V; 3.0A glass passivated rectifier; diffused junction; high current capability and low forward voltage drop | distributor | - | 2 | -65°C | 150°C | 59 K |
| 1N5402G | 200 V, 3 A, general purpose GPP diode | distributor | DO | 2 | - | - | 50 K |
| 1N5402G | Glass passivated junction rerctifier. Max repetitive peak reverse voltage 200 V. Max average forward rectified current 3.0 A. | distributor | - | 2 | -65°C | 150°C | 16 K |
| 1N5402GP | 3.0A, 200V ultra fast recovery rectifier | distributor | - | - | - | - | 78 K |
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