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Electronic component:Description:Manuf.PackagePinsT°minT°maxDatasheet
1N6098Schottky RectifierMicrosemi-Corporation----120 K
1N60AGermanium DiodeMicrosemi-Corporation----57 K
IXGH31N60600V ultra low V IGBTdistributor-3-55°C150°C55 K
IXGH31N60600V ultra low V IGBTdistributor-3-55°C150°C55 K
MGP11N60EInsulated gate bipolar transistorMotorola-3-55°C150°C123 K
MGW21N60EDInsulated gate bipolar transistorMotorola-3-55°C150°C152 K
MTD1N60ETMOS E-FET power field effect transistor D2PAK for surface mountMotorolaDPAK4-55°C150°C266 K
MTP1N60ETMOS E-FET power field effect transistorMotorola-4-55°C150°C232 K
OM11N60SA600V, 11 Amp, N-channel MOSFETdistributor-3-55°C150°C29 K
R3111N601A-TRLow voltage detector. Detector threshold (-Vdet) 6.0V. Output type: Nch open drain. Standard taping specification TRdistributor-5-40°C85°C205 K
R3111N601C-TRLow voltage detector. Detector threshold (-Vdet) 6.0V. Output type: CMOS. Standard taping specification TRdistributor-5-40°C85°C205 K
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