| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| 1N6010B | 500 milliwatts glass silicon zener diode, zener voltage 27V | Motorola | - | 2 | -65°C | 200°C | 424 K |
| 1N6015B | 500 milliwatts glass silicon zener diode, zener voltage 43V | Motorola | - | 2 | -65°C | 200°C | 424 K |
| 1N6023B | 500 milliwatts glass silicon zener diode, zener voltage 91V | Motorola | - | 2 | -65°C | 200°C | 424 K |
| 1N6025B | 500 milliwatts glass silicon zener diode, zener voltage 110V | Motorola | - | 2 | -65°C | 200°C | 424 K |
| 1N6025B | 500 milliwatts glass silicon zener diode, zener voltage 110V | Motorola | - | 2 | -65°C | 200°C | 424 K |
| IXGH31N60 | 600V ultra low V IGBT | distributor | - | 3 | -55°C | 150°C | 55 K |
| IXGH31N60 | 600V ultra low V IGBT | distributor | - | 3 | -55°C | 150°C | 55 K |
| IXGH31N60D1 | 600V HiPerFET power MOSFET | distributor | - | 3 | -55°C | 150°C | 53 K |
| IXGH41N60 | 600V ultra-low voltage IGBT | distributor | - | 3 | -55°C | 150°C | 34 K |
| IXGT31N60 | 600V ultra low V IGBT | distributor | - | 3 | -55°C | 150°C | 55 K |
| IXGT31N60D1 | 600V HiPerFET power MOSFET | distributor | - | 3 | -55°C | 150°C | 53 K |
| << [19] [20] [21] [22] [23] 24 [25] [26] [27] [28] |
|---|
