| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| 2N2894 | Silicon PNP switching transistor | Motorola | - | 3 | -65°C | 200°C | 44 K |
| 2SJ48 | Silicon P-channel MOSFET low frequency power amplifier (-120V drain-source breakdown voltage) | distributor | - | 3 | -55°C | 150°C | 107 K |
| 2SJ49 | Silicon P-channel MOSFET low frequency power amplifier (-140V drain-source breakdown voltage) | distributor | - | 3 | -55°C | 150°C | 107 K |
| 2SJ50 | Silicon P-channel MOSFET low frequency power amplifier (-160V drain-source breakdown voltage) | distributor | - | 3 | -55°C | 150°C | 107 K |
| 2SK133 | Silicon N-channel MOSFET low frequency power amplifier (-120V drain-source breakdown voltage) | distributor | - | 3 | -55°C | 150°C | 105 K |
| 2SK134 | Silicon N-channel MOSFET low frequency power amplifier (-140V drain-source breakdown voltage) | distributor | - | 3 | -55°C | 150°C | 105 K |
| 2SK135 | Silicon N-channel MOSFET low frequency power amplifier (-160V drain-source breakdown voltage) | distributor | - | 3 | -55°C | 150°C | 105 K |
| KR9602-012 | Keyboard encoder read only memory KEM | Standard-Microsystems-Corporation | - | 28 | 0°C | 70°C | 743 K |
| KRA225S | PNP transistor for high current switching applications, interface circuit and driver circuit applications. With buit-in bias resistors (1 and 10 kOm) | Korea-Electronics-Co--Ltd- | - | 3 | -55°C | 150°C | 573 K |
| KRA226S | PNP transistor for high current switching applications, interface circuit and driver circuit applications. With buit-in bias resistors (2.2 and 10 kOm) | Korea-Electronics-Co--Ltd- | - | 3 | -55°C | 150°C | 573 K |
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