| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| 2N7288H | Radiation Hardened N-Channel Power MOSFETs | Intersil-Corporation | - | - | - | - | 46 K |
| 2N7288R | Radiation Hardened N-Channel Power MOSFETs | Intersil-Corporation | - | - | - | - | 46 K |
| ACS20MS | Radiation Hardened Dual 4-Input NAND Gate | Intersil-Corporation | - | - | - | - | 85 K |
| ACTS20MS | Radiation Hardened Dual 4-Input NAND Gate | Intersil-Corporation | - | - | - | - | 10 M |
| HA-2850/883 | Low Power, High Slew Rate, Wideband Operational Amplifier | Intersil-Corporation | - | - | - | - | 171 K |
| HFA1112/883 | Ultra High Speed Programmable Gain Buffer Amplifier | Intersil-Corporation | - | - | - | - | 176 K |
| HS-2520RH | Radiation Hardened Uncompensated, High Slew Rate Operational Amplifier | Intersil-Corporation | - | - | - | - | 77 K |
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