| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| HGT1S20N35G3VL | 350V, 20A Ignition IGBT | Intersil-Corporation | - | - | - | - | 106 K |
| HGT1S20N35G3VLS | 350V, 20A Ignition IGBT | Intersil-Corporation | - | - | - | - | 106 K |
| HGTP20N35G3VL | 350V, 20A Ignition IGBT | Intersil-Corporation | - | - | - | - | 106 K |
| HIP2060 | 60V, 10A Half Bridge Power MOSFET Array | Intersil-Corporation | - | - | - | - | 59 K |
| HIP2100 | 100V/2A Peak, Low Cost, High Frequency Half Bridge Driver | Intersil-Corporation | - | - | - | - | 49 K |
| HS-2400RH | Radiation Hardened PRAM Four Channel Programmable Operational Amplifier | Intersil-Corporation | - | - | - | - | 101 K |
| HS-2620RH | Radiation Hardened, Very Wideband, High Input Impedance Uncompensated Operational Amplifiers | Intersil-Corporation | - | - | - | - | 78 K |
| HS-2622RH | Radiation Hardened, Very Wideband, High Input Impedance Uncompensated Operational Amplifiers | Intersil-Corporation | - | - | - | - | 78 K |
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