| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| FSL923A0D | 5A, -200V, 0.670 Ohm, Radiation Hardened, SEGR Resistant, P-Channel Power MOSFETs | Intersil-Corporation | - | - | - | - | 57 K |
| HS-22620RH | Rad Hard Dual, Wideband, High Input Impedance Uncompensated Operational Amplifier | Intersil-Corporation | - | - | - | - | 45 K |
| HUF75321D3 | 20A, 55V, 0.036 Ohm, N-Channel UltraFET Power MOSFETs | Intersil-Corporation | - | - | - | - | 129 K |
| HUF75321D3S | 20A, 55V, 0.036 Ohm, N-Channel UltraFET Power MOSFETs | Intersil-Corporation | - | - | - | - | 129 K |
| HUF75321P3 | 35A, 55V, 0.034 Ohm, N-Channel UltraFET Power MOSFETs | Intersil-Corporation | - | - | - | - | 130 K |
| HUF75321S3S | 35A, 55V, 0.034 Ohm, N-Channel UltraFET Power MOSFETs | Intersil-Corporation | - | - | - | - | 130 K |
| HUF75329G3 | 49A, 55V, 0.024 Ohm, N-Channel UltraFET Power MOSFETs | Intersil-Corporation | - | - | - | - | 173 K |
| RFD20N03 | 20A, 30V, 0.025 Ohm, N-Channel Power MOSFETs | Intersil-Corporation | - | - | - | - | 76 K |
| RFD20N03SM | 20A, 30V, 0.025 Ohm, N-Channel Power MOSFETs | Intersil-Corporation | - | - | - | - | 76 K |
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