| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| FSYC260D | Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs | Intersil-Corporation | - | - | - | - | 48 K |
| FSYC260R | Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs | Intersil-Corporation | - | - | - | - | 48 K |
| FSYC264D | Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs | Intersil-Corporation | - | - | - | - | 48 K |
| FSYC264R | Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs | Intersil-Corporation | - | - | - | - | 48 K |
| HGTG18N120BND | 54A, 1200V, NPT Series N-Channel IGBT with Anti-Parallel Hyperfast Diode | Intersil-Corporation | - | - | - | - | 95 K |
| HS-1825ARH | Radiation Hardened High-Speed, Dual Output PWM | Intersil-Corporation | - | - | - | - | 35 K |
| HS-2100RH | Radiation Hardened High Frequency Half Bridge Driver | Intersil-Corporation | - | - | - | - | 73 K |
| HS-2100RH | Radiation Hardened High Frequency Half Bridge Driver | Intersil-Corporation | - | - | - | - | 73 K |
| HUF75229P3 | 44A, 50V, 0.022 Ohm, N-Channel, UltraFET Power MOSFET | Intersil-Corporation | - | - | - | - | 135 K |
| HUF76132S3S | 75A, 30V, 0.011 Ohm, N-Channel, Logic Level UltraFET Power MOSFETs | Intersil-Corporation | - | - | - | - | 110 K |
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