Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
---|
FSL214D | Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs | Intersil-Corporation | - | - | - | - | 57 K |
HGT1S10N120BNS | 35A, 1200V, NPT Series N-Channel IGBT | Intersil-Corporation | - | - | - | - | 81 K |
HGT1S11N120CNS | 43A, 1200V, NPT Series N-Channel IGBT | Intersil-Corporation | - | - | - | - | 81 K |
HGTG10N120BN | 35A, 1200V, NPT Series N-Channel IGBT | Intersil-Corporation | - | - | - | - | 81 K |
HGTG10N120BND | 35A, 1200V, NPT Series N-Channel IGBT with Anti-Parallel Hyperfast Diode | Intersil-Corporation | - | - | - | - | 82 K |
HGTG11N120CN | 43A, 1200V, NPT Series N-Channel IGBT | Intersil-Corporation | - | - | - | - | 81 K |
HGTP10N120BN | 35A, 1200V, NPT Series N-Channel IGBT | Intersil-Corporation | - | - | - | - | 81 K |
HGTP11N120CN | 43A, 1200V, NPT Series N-Channel IGBT | Intersil-Corporation | - | - | - | - | 81 K |
HS-4423BRH | Radiation Hardened Dual, Inverting Power MOSFET Drivers | Intersil-Corporation | - | - | - | - | 56 K |
JANSR2N7401 | 6A, 250V, 0.600 Ohm, Rad Hard, N-Channel Power MOSFET | Intersil-Corporation | - | - | - | - | 55 K |
<< [2916] [2917] [2918] [2919] [2920] 2921 [2922] [2923] [2924] [2925] [2926] >> |
---|