Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
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AW002R2-12 | GaAs SPDT IC 10 Watt T/R switch DC-2.5 GHz | distributor | SOIC | 8 | -40°C | 85°C | 24 K |
HY92-12 | 90 degree hybrid 0.88-0.96 GHz | distributor | SOIC | 8 | -40°C | 85°C | 48 K |
M28F512-12B1 | Memory configuration 64Kx8 Memory type Flash Memory size 512 K-bit 512K (64K8) FLASH memory - 120ns Access | SGS-Thomson-Microelectronics | DIL | 32 | - | - | 523 K |
M28F512-12C1 | Memory configuration 64Kx8 Memory type Flash Memory size 512 K-bit 512K (64K8) FLASH memory - 120ns Access (PLCC) | SGS-Thomson-Microelectronics | PLCC | 32 | - | - | 523 K |
M4-32/32-12VI | High-performance E2CMOS in-system programmable logic, 5V Vcc, 32 macrocells, 32 I/Os, 12ns | Lattice-Semiconductor-Corporation | TQFP | 44 | -40°C | 85°C | 720 K |
M4-32/32-12VI48 | High-performance E2CMOS in-system programmable logic, 5V Vcc, 32 macrocells, 32 I/Os, 12ns | Lattice-Semiconductor-Corporation | TQFP | 48 | -40°C | 85°C | 720 K |
M4-64/32-12JC | High-performance E2CMOS in-system programmable logic, 5V Vcc, 64 macrocells, 32 I/Os, 12ns | Lattice-Semiconductor-Corporation | PLCC | 44 | 0°C | 70°C | 720 K |
M4LV-32/32-12VI | High-performance E2CMOS in-system programmable logic, 3.3V Vcc, 32 macrocells, 32 I/Os, 12ns | Lattice-Semiconductor-Corporation | TQFP | 44 | -40°C | 85°C | 720 K |
M4LV-64/32-12VC | High-performance E2CMOS in-system programmable logic, 3.3V Vcc, 64 macrocells, 32 I/Os, 12ns | Lattice-Semiconductor-Corporation | TQFP | 44 | 0°C | 70°C | 720 K |
RGP02-12E | 1200 V, 0.5 A, high voltage fast rectifier diode | distributor | - | 2 | -65°C | 150°C | 19 K |
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