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Electronic component:Description:Manuf.PackagePinsT°minT°maxDatasheet
ISPLS1016EA-200LJ44200 MHz in-system prommable high density PLDLattice-Semiconductor-CorporationPLCC44-55°C125°C162 K
ISPLS1016EA-200LT44200 MHz in-system prommable high density PLDLattice-Semiconductor-CorporationPLCC44-55°C125°C162 K
ISPLS1024-200LT100200 MHz in-system prommable high density PLDLattice-Semiconductor-CorporationTQFP100-55°C125°C162 K
ISPLS1032EA-200LT10060 MHz in-system prommable high density PLDLattice-Semiconductor-CorporationTQFP100-55°C125°C198 K
ISPLSI2032E-200LT44200 MHz in-system prommable superFAST high density PLDLattice-Semiconductor-CorporationTQFP440°C70°C173 K
ISPLSI2032E-200LT48200 MHz in-system prommable superFAST high density PLDLattice-Semiconductor-CorporationTQFP480°C70°C173 K
PTB2008215 watts, 1.8-2.0 GHz cellular RF power transistorEricsson-Microelectronics202093--168 K
PTB2009130 watts, 470-860 MHz UHF TV linear power transistorEricsson-Microelectronics202124--357 K
PTB2009515 watts, 915-960 MHz cellular radio RF power transistorEricsson-Microelectronics202016--44 K
PTH3200325 watts, 1.9-2.0 GHz 50-Ohm high-gain power hybridEricsson-Microelectronics-4--420 K
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