| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| CM200DU-24F | 200A IGBT module for high power switching use | Mitsubishi-Electric-Corporation-Semiconductor-Group | - | 4 | -40°C | 150°C | 71 K |
| CM200TU-12F | 200A IGBT module for high power switching use | Mitsubishi-Electric-Corporation-Semiconductor-Group | - | 17 | -40°C | 150°C | 82 K |
| FD2000BV-90DA | Gate turn-off thyristor for high power inverter use press pack type | Mitsubishi-Electric-Corporation-Semiconductor-Group | - | 2 | -40°C | 125°C | 72 K |
| FD2000DU-120 | High-frequency rectifier diode for high power, high frequency, press pack type | Mitsubishi-Electric-Corporation-Semiconductor-Group | - | 2 | -40°C | 125°C | 48 K |
| FG2000FX-50DA | Gate turn-off thyristor for high power inverter use press pack type | Mitsubishi-Electric-Corporation-Semiconductor-Group | - | 2 | -40°C | 125°C | 72 K |
| FG2000JV-90DA | Gate turn-off thyristor for high power inverter use, press pack type | Mitsubishi-Electric-Corporation-Semiconductor-Group | - | 2 | -40°C | 125°C | 41 K |
| INT200TFI1 | 600V low-side driver IC | distributor | SOIC | 8 | -40°C | 85°C | 95 K |
| INT200TFI2 | 800V low-side driver IC | distributor | SOIC | 8 | -40°C | 85°C | 95 K |
| PM200DSA060 | 200 Amp intelligent power module for flat-base type insulated package | Mitsubishi-Electric-Corporation-Semiconductor-Group | - | 13 | -20°C | 150°C | 66 K |
| PM200DSA120 | 200 Amp intelligent power module for flat-base type insulated package | Mitsubishi-Electric-Corporation-Semiconductor-Group | - | 13 | -20°C | 150°C | 63 K |
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