| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| F2001 | 2.5 Watt, Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor | distributor | - | 2 | -65°C | 150°C | 37 K |
| F2002 | 5 Watt, Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor | distributor | - | 2 | -65°C | 150°C | 37 K |
| F2003 | 5 Watt, Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor | distributor | - | 4 | -65°C | 150°C | 37 K |
| F2004 | 8 Watt, Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor | distributor | - | 4 | -65°C | 150°C | 37 K |
| MSK5200TS | Dual positive/negative, 3 AMP, ultra low dropout fixed voltage regulator | distributor | TOP TAB | 5 | -40°C | 125°C | 345 K |
| XC2S200-5FG256C | Spartan-II 2.5V field programmable gate array. | distributor | Fine pitch BGA | 256 | 0°C | 85°C | 42 K |
| XC2S200-5PQ208C | Spartan-II 2.5V field programmable gate array. | distributor | Plastic PQFP | 208 | 0°C | 85°C | 42 K |
| XC2S200-5PQ208I | Spartan-II 2.5V field programmable gate array. | distributor | Plastic PQFP | 208 | -40°C | 100°C | 42 K |
| XC2S200-6FG256C | Spartan-II 2.5V field programmable gate array. | distributor | Fine pitch BGA | 256 | 0°C | 85°C | 42 K |
| XC2S200-6PQ208C | Spartan-II 2.5V field programmable gate array. | distributor | Plastic PQFP | 208 | 0°C | 85°C | 42 K |
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