Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
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2SA2004 | Silicon PNP epitaxial planar type power transistor | Panasonic---Semiconductor-Company-of-Matsushita-Electronics-Corporation | - | - | - | - | 34 K |
2SA2009 | Small signal silicon PNP transistor | Panasonic---Semiconductor-Company-of-Matsushita-Electronics-Corporation | - | - | - | - | 43 K |
2SD2000 | Silicon NPN triple diffusion planar type power transistor | Panasonic---Semiconductor-Company-of-Matsushita-Electronics-Corporation | - | - | - | - | 55 K |
BUP200D | IGBT with antiparallel diode | Infineon-formely-Siemens | - | 3 | -55°C | 150°C | 325 K |
LNP120011 | Panel display unit. Display Colors (RG) , Size (320x320mm Type) | Panasonic---Semiconductor-Company-of-Matsushita-Electronics-Corporation | - | - | - | - | 156 K |
MA3X200F | Silicon epitaxial planer type switching diode | Panasonic---Semiconductor-Company-of-Matsushita-Electronics-Corporation | - | - | - | - | 47 K |
MAZ3200D | Silicon planer type zener diode | Panasonic---Semiconductor-Company-of-Matsushita-Electronics-Corporation | - | - | - | - | 28 K |
MAZ3200X | Silicon planer type zener diode | Panasonic---Semiconductor-Company-of-Matsushita-Electronics-Corporation | - | - | - | - | 28 K |
MAZ4200N | Silicon planer type zener diode | Panasonic---Semiconductor-Company-of-Matsushita-Electronics-Corporation | - | - | - | - | 72 K |
PN200A | PNP General Purpose Amplifier | Fairchild-Semiconductor | - | - | - | - | 51 K |
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