| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| GS8161E18T-200I | 6.5ns 200MHz 1M x 18 pipelined and flow through synchronous SRAM | distributor | TQFP | 100 | -40°C | 85°C | 1 M |
| GS8161E36T-200I | 6.5ns 200MHz 512K x 36 pipelined and flow through synchronous SRAM | distributor | TQFP | 100 | -40°C | 85°C | 1 M |
| GS8161Z18D-200I | 6.5ns 200MHz 1M x 18 18MB pipelined and flow through synchronous NBT SRAM | distributor | BGA | 165 | -40°C | 85°C | 1 M |
| GS8161Z18T-200I | 6.5ns 200MHz 1M x 18 18MB pipelined and flow through synchronous NBT SRAM | distributor | TQFP | 100 | -40°C | 85°C | 1 M |
| GS8161Z32D-200I | 6.5ns 200MHz 512K x 32 18MB pipelined and flow through synchronous NBT SRAM | distributor | BGA | 165 | -40°C | 85°C | 1 M |
| GS8161Z36D-200I | 6.5ns 200MHz 512K x 36 18MB pipelined and flow through synchronous NBT SRAM | distributor | BGA | 165 | -40°C | 85°C | 1 M |
| GS8161Z36T-200I | 6.5ns 200MHz 512K x 36 18MB pipelined and flow through synchronous NBT SRAM | distributor | TQFP | 100 | -40°C | 85°C | 1 M |
| GS816218B-200I | 6.5ns 200MHz 1M x 18 18MB S/DCD synchronous burst SRAM | distributor | BGA | 119 | -40°C | 85°C | 956 K |
| GS816218D-200I | 6.5ns 200MHz 1M x 18 18MB S/DCD synchronous burst SRAM | distributor | BGA | 165 | -40°C | 85°C | 956 K |
| GS816236B-200I | 6.5ns 200MHz 512K x 36 18MB S/DCD synchronous burst SRAM | distributor | BGA | 119 | -40°C | 85°C | 956 K |
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