Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
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FM2G200US60 | IGBT | Fairchild-Semiconductor | - | - | - | - | 701 K |
FMBL1G200US60 | IGBT | Fairchild-Semiconductor | - | - | - | - | 699 K |
FTD2007 | N-Channel Silicon MOSFET Ultrahigh-Speed Switching Applications | SANYO-Electric-Co--Ltd- | - | - | - | - | 34 K |
FTS2003 | N-Channel Silicon MOSFET DC/DC Converter Applications | SANYO-Electric-Co--Ltd- | - | - | - | - | 99 K |
FTS2004 | N-Channel Silicon MOSFET Ultrahigh-Speed Switching Applications | SANYO-Electric-Co--Ltd- | - | - | - | - | 166 K |
FYP2004DN | SCHOTTKY BARRIER RECTIFIER | Fairchild-Semiconductor | - | - | - | - | 46 K |
FYP2006DN | SCHOTTKY BARRIER RECTIFIER | Fairchild-Semiconductor | - | - | - | - | 46 K |
FYPF2004DN | SCHOTTKY BARRIER RECTIFIER | Fairchild-Semiconductor | - | - | - | - | 46 K |
KSC2001 | NPN Epitaxial Silicon Transistor | Fairchild-Semiconductor | - | - | - | - | 25 K |
KSR2001 | PNP Epitaxial Silicon Transistor | Fairchild-Semiconductor | - | - | - | - | 37 K |
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