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Electronic component:Description:Manuf.PackagePinsT°minT°maxDatasheet
3EZ200D3 W, silicon zener diode. Nominal voltage 200 V, current 3.7 mA, +-20% tolerance.distributor-2-65°C175°C146 K
3EZ200D13 W, silicon zener diode. Nominal voltage 200 V, current 3.7 mA, +-1% tolerance.distributor-2-65°C175°C146 K
3EZ200D103 W, silicon zener diode. Nominal voltage 200 V, current 3.7 mA, +-10% tolerance.distributor-2-65°C175°C146 K
3EZ200D23 W, silicon zener diode. Nominal voltage 200 V, current 3.7 mA, +-2% tolerance.distributor-2-65°C175°C146 K
3EZ200D33 W, silicon zener diode. Nominal voltage 200 V, current 3.7 mA, +-3% tolerance.distributor-2-65°C175°C146 K
3EZ200D43 W, silicon zener diode. Nominal voltage 200 V, current 3.7 mA, +-4% tolerance.distributor-2-65°C175°C146 K
3EZ200D53 W, silicon zener diode. Nominal voltage 200 V, current 3.7 mA, +-5% tolerance.distributor-2-65°C175°C146 K
KBP200GSingle-phase 2.0 A glass passivated bridge rectifier. Max recurrent peak reverse voltage 50V.distributorKBP4-55°C150°C130 K
KBP200GSingle-phase 2.0 A glass passivated bridge rectifier. Max recurrent peak reverse voltage 50V.distributor-4-55°C150°C124 K
P4KE200A400 Watt peak power. Transient voltage suppressor diode. Nominal voltage 200 V.distributor-2-65°C150°C353 K
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