Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
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GS832018T-133 | 133MHz 11ns 2M x 18 36Mb synchronous burst SRAM | distributor | TQFP | 100 | 0°C | 70°C | 801 K |
GS832018T-150 | 150MHz 10ns 2M x 18 36Mb synchronous burst SRAM | distributor | TQFP | 100 | 0°C | 70°C | 801 K |
GS832018T-166 | 166MHz 8.5ns 2M x 18 36Mb synchronous burst SRAM | distributor | TQFP | 100 | 0°C | 70°C | 801 K |
GS832018T-200 | 200MHz 7.5ns 2M x 18 36Mb synchronous burst SRAM | distributor | TQFP | 100 | 0°C | 70°C | 801 K |
GS832018T-225 | 225MHz 6.5ns 2M x 18 36Mb synchronous burst SRAM | distributor | TQFP | 100 | 0°C | 70°C | 801 K |
GS832018T-250 | 250MHz 6ns 2M x 18 36Mb synchronous burst SRAM | distributor | TQFP | 100 | 0°C | 70°C | 801 K |
S2010DS2 | Sensitivities thyristor, 10 ampere, 200 volt | distributor | - | 3 | -40°C | 110°C | 198 K |
S2010DS3 | Sensitivities thyristor, 10 ampere, 200 volt | distributor | - | 3 | -40°C | 110°C | 198 K |
S2010VS2 | Sensitivities thyristor, 10 ampere, 200 volt | distributor | - | 3 | -40°C | 110°C | 198 K |
S2010VS3 | Sensitivities thyristor, 10 ampere, 200 volt | distributor | - | 3 | -40°C | 110°C | 198 K |
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