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Electronic component:Description:Manuf.PackagePinsT°minT°maxDatasheet
GS832018T-133133MHz 11ns 2M x 18 36Mb synchronous burst SRAMdistributorTQFP1000°C70°C801 K
GS832018T-150150MHz 10ns 2M x 18 36Mb synchronous burst SRAMdistributorTQFP1000°C70°C801 K
GS832018T-166166MHz 8.5ns 2M x 18 36Mb synchronous burst SRAMdistributorTQFP1000°C70°C801 K
GS832018T-200200MHz 7.5ns 2M x 18 36Mb synchronous burst SRAMdistributorTQFP1000°C70°C801 K
GS832018T-225225MHz 6.5ns 2M x 18 36Mb synchronous burst SRAMdistributorTQFP1000°C70°C801 K
GS832018T-250250MHz 6ns 2M x 18 36Mb synchronous burst SRAMdistributorTQFP1000°C70°C801 K
S2010DS2Sensitivities thyristor, 10 ampere, 200 voltdistributor-3-40°C110°C198 K
S2010DS3Sensitivities thyristor, 10 ampere, 200 voltdistributor-3-40°C110°C198 K
S2010VS2Sensitivities thyristor, 10 ampere, 200 voltdistributor-3-40°C110°C198 K
S2010VS3Sensitivities thyristor, 10 ampere, 200 voltdistributor-3-40°C110°C198 K
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