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Electronic component:Description:Manuf.PackagePinsT°minT°maxDatasheet
2SK2011N-channel MOS silicon FET, very high-speed switching applicationSANYO-Electric-Co--Ltd-20633--83 K
AN2011SCorrelated Double Sampling ICPanasonic---Semiconductor-Company-of-Matsushita-Electronics-Corporation----18 K
MC12011PDual modulus prescalerMotorolaPDIP16-35°C85°C210 K
PRC201100/150MEMI/RFI tapped filterCalifornia-Micro-DevicesSOIC200°C70°C44 K
PRC201101/101MEMI/RFI tapped filterCalifornia-Micro-DevicesSOIC200°C70°C44 K
SG2011JDriver - Medium Current ArrayMicrosemi-CorporationDIP---98 K
SG2011J/883BDriver - Medium Current ArrayMicrosemi-CorporationDIP---98 K
SG2011LDriver - Medium Current ArrayMicrosemi-CorporationLCC---98 K
SG2011L/883BDriver - Medium Current ArrayMicrosemi-CorporationLCC---98 K
TA2011SMic amp ICToshiba-7-25°C75°C213 K
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