Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
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BS616UV2011AI | 70/100ns 1.8-3.6V ultra low power/voltage CMOS SRAM 128K x 16bit switchable | distributor | BGA | 48 | -40°C | 85°C | 254 K |
BS616UV2011DC | 70/100ns 1.8-3.6V ultra low power/voltage CMOS SRAM 128K x 16bit switchable | distributor | DICE | 44 | 0°C | 70°C | 254 K |
BS616UV2011DI | 70/100ns 1.8-3.6V ultra low power/voltage CMOS SRAM 128K x 16bit switchable | distributor | DICE | 44 | -40°C | 85°C | 254 K |
BS616UV2011EC | 70/100ns 1.8-3.6V ultra low power/voltage CMOS SRAM 128K x 16bit switchable | distributor | TSOP | 44 | 0°C | 70°C | 254 K |
BS616UV2011EI | 70/100ns 1.8-3.6V ultra low power/voltage CMOS SRAM 128K x 16bit switchable | distributor | TSOP | 44 | -40°C | 85°C | 254 K |
BS616UV2011TC | 70/100ns 1.8-3.6V ultra low power/voltage CMOS SRAM 128K x 16bit switchable | distributor | TSOP | 48 | 0°C | 70°C | 254 K |
BS616UV2011TI | 70/100ns 1.8-3.6V ultra low power/voltage CMOS SRAM 128K x 16bit switchable | distributor | TSOP | 48 | -40°C | 85°C | 254 K |
CYG2011 | Cybergate | distributor | - | 18 | 0°C | 70°C | 71 K |
HSH2011NIEO | Lamp for photolithography. Power 2000 watts, current 80 amps(DC), voltage 25 volts(DC). Temperature(at base) 220degC(max). | distributor | - | 2 | - | - | 42 K |
PD412011 | 2000V, 1100A general purpose dual diode | distributor | - | - | - | - | 88 K |
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