Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
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2021-100 | Delay 100 +/-10 ns, fixed SIP delay line Tr<1ns | distributor | SIP | 3 | -65°C | 125°C | 31 K |
2021-150 | Delay 150 +/-10 ns, fixed SIP delay line Tr<1ns | distributor | SIP | 3 | -65°C | 125°C | 31 K |
2021-200 | Delay 200 +/-10 ns, fixed SIP delay line Tr<1ns | distributor | SIP | 3 | -65°C | 125°C | 31 K |
2021-250 | Delay 250 +/-10 ns, fixed SIP delay line Tr<1ns | distributor | SIP | 3 | -65°C | 125°C | 31 K |
2021-300 | Delay 300 +/-10 ns, fixed SIP delay line Tr<1ns | distributor | SIP | 3 | -65°C | 125°C | 31 K |
2021-350 | Delay 350 +/-10 ns, fixed SIP delay line Tr<1ns | distributor | SIP | 3 | -65°C | 125°C | 31 K |
2021-400 | Delay 400 +/-10 ns, fixed SIP delay line Tr<1ns | distributor | SIP | 3 | -65°C | 125°C | 31 K |
2021-500 | Delay 500 +/-10 ns, fixed SIP delay line Tr<1ns | distributor | SIP | 3 | -65°C | 125°C | 31 K |
F2021 | 7.5 Watt, Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor | distributor | - | 2 | -65°C | 150°C | 37 K |
MAAM12021 | 1.5-1.6 GHz, low noise amplifier | M-A-COM---manufacturer-of-RF | - | 8 | -40°C | 85°C | 117 K |
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