Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
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1N1202R | 12A silicon power rectifier, 200V | Microsemi-Corporation | DO4 | 2 | -65°C | 200°C | 138 K |
1N1202RB | 12A silicon power rectifier, 200V | Microsemi-Corporation | DO4 | 2 | -65°C | 200°C | 138 K |
BF1202R | N-channel dual-gate PoLo MOS-FET. | Philips-Semiconductors | SOT143R | 4 | 0°C | 150°C | 103 K |
DC-202R | 1.8watt DC-DC converter, 500Vdc isolation, in=5V, out=5V | distributor | DIP | 23 | -25°C | 71°C | 96 K |
FJNS4202R | PNP Epitaxial Silicon Transistor | Fairchild-Semiconductor | - | - | - | - | 36 K |
JAN1N1202RA | 12A silicon power rectifier, 200V | Microsemi-Corporation | DO4 | 2 | -65°C | 150°C | 106 K |
JANTX1NV1202RA | 12A silicon power rectifier, 200V | Microsemi-Corporation | DO4 | 2 | -65°C | 150°C | 106 K |
M5M27C202RV-15 | 131072-word by 16-bit CMOS erasable and electrically reprogrammable ROM, 150ns | Mitsubishi-Electric-Corporation-Semiconductor-Group | TSOP | 40 | -10°C | 80°C | 586 K |
TE202R | 200 V, 2 A, glass passivated junction fast switching rectifier | distributor | - | 2 | -55°C | 150°C | 139 K |
TS202R | 200 V, 2 A, fast switching plastic diode | distributor | - | 2 | -55°C | 150°C | 163 K |
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