Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
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F2041 | 15 Watt, Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor | distributor | - | 4 | -65°C | 150°C | 36 K |
NJM2041D | Low-noise dual operational amplifier | New-Japan-Radio-Co--Ltd--JRC | DIP | 8 | -20°C | 75°C | 195 K |
NJM2041L | Low-noise dual operational amplifier | New-Japan-Radio-Co--Ltd--JRC | SIP | 8 | -20°C | 75°C | 195 K |
NJM2041M | Low-noise dual operational amplifier | New-Japan-Radio-Co--Ltd--JRC | DMP | 8 | -20°C | 75°C | 195 K |
R20410 | Standard Rectifier (trr more than 500ns) | Microsemi-Corporation | - | - | - | - | 131 K |
R204120 | Standard Rectifier (trr more than 500ns) | Microsemi-Corporation | - | - | - | - | 131 K |
S20410 | Standard Rectifier (trr more than 500ns) | Microsemi-Corporation | - | - | - | - | 131 K |
S204100 | Standard Rectifier (trr more than 500ns) | Microsemi-Corporation | - | - | - | - | 131 K |
S204120 | Standard Rectifier (trr more than 500ns) | Microsemi-Corporation | - | - | - | - | 131 K |
SC2041IS.TR | HotSwitch USB power distribution switch | Semtech-Corporation | - | 8 | -40°C | 125°C | 199 K |
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