| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| KA22065 | 4.6W dual power amplifier | Samsung-Electronic | SIP | 12 | -20°C | 70°C | 98 K |
| KA22069BN | 2-channel power amplifier | Samsung-Electronic | DIP | 16 | -20°C | 70°C | 81 K |
| KA2206B | 2-channel power amplifier | Samsung-Electronic | DIP | 12 | -20°C | 70°C | 81 K |
| KS22069BN | 2-channel power amplifier | Samsung-Electronic | DIP | 16 | -20°C | 70°C | 81 K |
| KS2206B | 2-channel power amplifier | Samsung-Electronic | DIP | 12 | -20°C | 70°C | 81 K |
| RL206-T3 | Reverse voltage: 800V, 2.0A silicon rectifier | distributor | - | 2 | -65°C | 125°C | 40 K |
| RL206-T3 | Reverse voltage: 800V, 2.0A silicon rectifier | distributor | - | 2 | -65°C | 125°C | 40 K |
| RL206-TB | Reverse voltage: 800V, 2.0A silicon rectifier | distributor | - | 2 | -65°C | 125°C | 40 K |
| RL206-TB | Reverse voltage: 800V, 2.0A silicon rectifier | distributor | - | 2 | -65°C | 125°C | 40 K |
| VN1206L | 120V N-channel enhancement-mode vertical DMOS FET | distributor | - | 3 | -55°C | 150°C | 441 K |
| VP2206N2 | 60V P-channel enhancement-mode vertical DMOS FET | distributor | - | 3 | -55°C | 150°C | 456 K |
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