| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| DAN209S | Dual diode for ultra-high-speed switching, 80V | ROHM | SPT | 3 | -55°C | 150°C | 194 K |
| FS1209BH | 200 V, standard SCR | distributor | - | 3 | -40°C | 125°C | 130 K |
| FS1209DH | 400 V, standard SCR | distributor | - | 3 | -40°C | 125°C | 130 K |
| FS1209DH | 400 V, standard SCR | distributor | - | 3 | -40°C | 125°C | 130 K |
| FS1209MH | 600 V, standard SCR | distributor | - | 3 | -40°C | 125°C | 130 K |
| NE5209D | Wideband variable gain amplifier. | Philips-Semiconductors | SO | 16 | 0°C | 70°C | 306 K |
| NE5209N | Wideband variable gain amplifier. | Philips-Semiconductors | - | 16 | 0°C | 70°C | 306 K |
| NE5209N | Wideband variable gain amplifier. | Philips-Semiconductors | DIP | 16 | 0°C | 70°C | 306 K |
| SA5209D | Wideband variable gain amplifier. | Philips-Semiconductors | - | 16 | -40°C | 85°C | 306 K |
| SA5209N | Wideband variable gain amplifier. | Philips-Semiconductors | - | 16 | -40°C | 85°C | 306 K |
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