Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
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ADR420AR | 18V; ultraprecision low-noise, 2.048V / 2.500V / 3.00V / 5.00V XFET voltage reference. For bettery-powered instrumentation, portable medical instruments, precision data acquisition systems, high resolution converters | Analog-Devices | SOIC | 8 | -40°C | 125°C | 223 K |
DS1220AB-100 | 2k x 8 CMOS nonvolatile SRAM, 100ns | Dallas-Semiconductor | DIP | 24 | 0°C | 70°C | 179 K |
DS1220AB-100-IND | 2k x 8 CMOS nonvolatile SRAM, 100ns | Dallas-Semiconductor | DIP | 24 | -40°C | 85°C | 179 K |
DS1220AB-120 | 2k x 8 CMOS nonvolatile SRAM, 120ns | Dallas-Semiconductor | DIP | 24 | 0°C | 70°C | 179 K |
DS1220AB-150 | 2k x 8 CMOS nonvolatile SRAM, 150ns | Dallas-Semiconductor | DIP | 24 | 0°C | 70°C | 179 K |
DS1220AB-200 | 2k x 8 CMOS nonvolatile SRAM, 200ns | Dallas-Semiconductor | DIP | 24 | 0°C | 70°C | 179 K |
DS1220AD-100 | 2k x 8 CMOS nonvolatile SRAM, 100ns | Dallas-Semiconductor | DIP | 24 | 0°C | 70°C | 179 K |
DS1220AD-120 | 2k x 8 CMOS nonvolatile SRAM, 120ns | Dallas-Semiconductor | DIP | 24 | 0°C | 70°C | 179 K |
DS1220AD-150 | 2k x 8 CMOS nonvolatile SRAM, 150ns | Dallas-Semiconductor | DIP | 24 | 0°C | 70°C | 179 K |
DS1220AD-200 | 2k x 8 CMOS nonvolatile SRAM, 200ns | Dallas-Semiconductor | DIP | 24 | 0°C | 70°C | 179 K |
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