| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| BCR20AM | 20A semiconductor for medium power use, non-insulated type, planar passivation type | Mitsubishi-Electric-Corporation-Semiconductor-Group | - | 4 | -40°C | 125°C | 51 K |
| CT20AS-8 | 130A power mosfet for high-speed switching use | Mitsubishi-Electric-Corporation-Semiconductor-Group | - | 4 | -55°C | 150°C | 31 K |
| CT20ASJ-8 | 130A insulated gate bipolar transistor for strobe flasher use | Mitsubishi-Electric-Corporation-Semiconductor-Group | - | 4 | -55°C | 150°C | 31 K |
| CT20ASL-8 | 130A power mosfet for high-speed switching use | Mitsubishi-Electric-Corporation-Semiconductor-Group | - | 4 | -55°C | 150°C | 23 K |
| FX20ASJ-03 | 20A power mosfet for high-speed switching use | Mitsubishi-Electric-Corporation-Semiconductor-Group | - | 4 | -55°C | 150°C | 44 K |
| FX20ASJ-2 | 20A power mosfet for high-speed switching use | Mitsubishi-Electric-Corporation-Semiconductor-Group | - | 4 | -55°C | 150°C | 45 K |
| M2V28S20ATP-6 | 128M synchronous DRAM | Mitsubishi-Electric-Corporation-Semiconductor-Group | TSOP | 54 | 0°C | 70°C | 626 K |
| M2V28S20ATP-6L | 128M synchronous DRAM | Mitsubishi-Electric-Corporation-Semiconductor-Group | TSOP | 54 | 0°C | 70°C | 626 K |
| M2V28S20ATP-6L | 128M synchronous DRAM | Mitsubishi-Electric-Corporation-Semiconductor-Group | TSOP | 54 | 0°C | 70°C | 626 K |
| MAX520AMJE | Quad, 2-wire serial 8-bit DAC with Rail-to-Rail, unbuffered outputs. TUE(LSB) 1. | Maxim-Integrated-Producs | CERDIP | 16 | -55°C | 125°C | 274 K |
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