| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| AM29DL400BT-120EC | 4 Megabit (512 K x 8-bit/256 K x 16-bit) CMOS 3.0 volt-only, simultaneous operation flash memory, 120ns | AMD-Advanced-Micro-Devices | TSOP | 40 | 0°C | 70°C | 561 K |
| Am29LV160DB-120EC | 16 Megabit (2 M x 8-bit/1 M x 16-bit) CMOS 3.0 volt-only boot sector flash memory, 120ns | AMD-Advanced-Micro-Devices | TSOP | 48 | 0°C | 70°C | 1 M |
| Am29LV160DB-120EE | 16 Megabit (2 M x 8-bit/1 M x 16-bit) CMOS 3.0 volt-only boot sector flash memory, 120ns | AMD-Advanced-Micro-Devices | TSOP | 48 | -55°C | 125°C | 1 M |
| Am29LV160DB-120EE | 16 Megabit (2 M x 8-bit/1 M x 16-bit) CMOS 3.0 volt-only boot sector flash memory, 120ns | AMD-Advanced-Micro-Devices | TSOP | 48 | -55°C | 125°C | 1 M |
| Am29LV160DB-120EI | 16 Megabit (2 M x 8-bit/1 M x 16-bit) CMOS 3.0 volt-only boot sector flash memory, 120ns | AMD-Advanced-Micro-Devices | TSOP | 48 | -40°C | 85°C | 1 M |
| Am29LV160DT-120EC | 16 Megabit (2 M x 8-bit/1 M x 16-bit) CMOS 3.0 volt-only boot sector flash memory, 120ns | AMD-Advanced-Micro-Devices | TSOP | 48 | 0°C | 70°C | 1 M |
| Am29LV160DT-120EE | 16 Megabit (2 M x 8-bit/1 M x 16-bit) CMOS 3.0 volt-only boot sector flash memory, 120ns | AMD-Advanced-Micro-Devices | TSOP | 48 | -55°C | 125°C | 1 M |
| NJM78L20EA | 3-terminal positive voltage regulator, 350mW, 20V | New-Japan-Radio-Co--Ltd--JRC | EMP8 | 8 | -40°C | 85°C | 223 K |
| NJM78L20EA | 3-terminal positive voltage regulator, 350mW, 20V | New-Japan-Radio-Co--Ltd--JRC | EMP8 | 8 | -40°C | 85°C | 223 K |
| T10C220EF | T10C series Sibod, glass passivated junction, bi-directional device for telephone and line card protection. Irm = 1uA @ Vrm = 200V,max. Vbr = 220V,min @ 1uA, Holding carrent Ih = 180mA,th min. | distributor | - | 3 | -40°C | 150°C | 80 K |
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