| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| ISL9R18120G2 | 18A, 1200V Stealth Diode | Fairchild-Semiconductor | - | - | - | - | 161 K |
| ISL9R18120G2 | 18A, 1200V Stealth Diode | Fairchild-Semiconductor | - | - | - | - | 161 K |
| ISL9R30120G2 | 30A, 1200V Stealth Diode | Fairchild-Semiconductor | - | - | - | - | 143 K |
| ML120G2 | High power semiconductor laser | Mitsubishi-Electric-Corporation-Semiconductor-Group | - | 3 | -10°C | 60°C | 50 K |
| WS128K32L-20G2TM | 20ns; 5V power supply; 128K x 32 SRAM module, SMD 5962-93187 & 5962-95595 | distributor | CQFP | 68 | -55°C | 125°C | 156 K |
| WS128K32L-20G2TMA | 20ns; 5V power supply; 128K x 32 SRAM module, SMD 5962-93187 & 5962-95595 | distributor | CQFP | 68 | -55°C | 125°C | 156 K |
| WS128K32L-20G2TQ | 20ns; 5V power supply; 128K x 32 SRAM module, SMD 5962-93187 & 5962-95595 | distributor | CQFP | 68 | - | - | 156 K |
| WS128K32L-20G2TQA | 20ns; 5V power supply; 128K x 32 SRAM module, SMD 5962-93187 & 5962-95595 | distributor | CQFP | 68 | - | - | 156 K |
| WS128K32N-20G2TQ | 20ns; 5V power supply; 128K x 32 SRAM module, SMD 5962-93187 & 5962-95595 | distributor | CQFP | 68 | - | - | 156 K |
| WS128K32N-20G2TQA | 20ns; 5V power supply; 128K x 32 SRAM module, SMD 5962-93187 & 5962-95595 | distributor | CQFP | 68 | - | - | 156 K |
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