| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| APT20GF120KR | 1200V, 32A fast IGBT | Advanced-Power-Technology-APT | - | 3 | -55°C | 150°C | 72 K |
| FK20KM-5 | 20A power mosfet for high-speed switching use | Mitsubishi-Electric-Corporation-Semiconductor-Group | - | 4 | -55°C | 150°C | 54 K |
| FK20KM-6 | 20A power mosfet for high-speed switching use | Mitsubishi-Electric-Corporation-Semiconductor-Group | - | 3 | -55°C | 150°C | 54 K |
| FX20KMJ-03 | 20A power mosfet for high-speed switching use | Mitsubishi-Electric-Corporation-Semiconductor-Group | - | 3 | -55°C | 150°C | 50 K |
| FX20KMJ-06 | 20A power mosfet for high-speed switching use | Mitsubishi-Electric-Corporation-Semiconductor-Group | - | 3 | -55°C | 150°C | 51 K |
| FX20KMJ-2 | 20A power mosfet for high-speed switching use | Mitsubishi-Electric-Corporation-Semiconductor-Group | - | 3 | -55°C | 150°C | 51 K |
| FX20KMJ-3 | 20A power mosfet for high-speed switching use | Mitsubishi-Electric-Corporation-Semiconductor-Group | - | 3 | -55°C | 150°C | 50 K |
| IRG4BC20K-S | Insulated gate bipolar transistor. VCES = 600V, VCE(on)typ. = 2.27V @ VGE = 15V, IC = 9.0A | International-Rectifier | DDPak | 3 | -55°C | 150°C | 162 K |
| ML720K8S | InGaAsP- MQW FP laser diode | Mitsubishi-Electric-Corporation-Semiconductor-Group | - | 4 | -40°C | 85°C | 163 K |
| QM20KD-HB | 20A - transistor module for medium power switching use, insulated type | Mitsubishi-Electric-Corporation-Semiconductor-Group | - | 15 | -40°C | 150°C | 76 K |
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