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Electronic component:Description:Manuf.PackagePinsT°minT°maxDatasheet
FK20KM-5250V fast recovery body diode MOSFETdistributor----60 K
IRG4BC20KDInsulated gate bipolar transistor with ultrafast soft recovery diode. VCES = 600V, VCE(on)typ. = 2.27V @ VGE = 15V, IC = 9.0AInternational-Rectifier-3-55°C150°C199 K
IRG4BC20KD-SInsulated gate bipolar transistor with ultrafast soft recovery diode. VCES = 600V, VCE(on)typ. = 2.27V @ VGE = 15V, IC = 9.0AInternational-RectifierDDPak3-55°C150°C222 K
IRG4PH20KDInsulated gate bipolar transistor with ultrafast soft recovery diode. VCES = 1200V, VCE(on)typ. = 3.17V @ VGE = 15V, IC = 5.0AInternational-Rectifier-3-55°C150°C276 K
M28F201-120K1Memory configuration 256Kx8 Memory type Flash Memory size 2 M-bit 2Mb (256K8) FLASH memory - 120ns Access (PLCC)SGS-Thomson-MicroelectronicsPLCC32--179 K
RGF20KA800 V, 2 A surface mount glass passivated junction fast recovery rectifierdistributor-2-65°C175°C63 K
RGF20KA800 V, 2 A surface mount glass passivated junction fast recovery rectifierdistributor-2-65°C175°C63 K
RGP20KA800 V, 2 A sintered glass passivated junction fast recovery rectifierdistributor-2-65°C175°C60 K
RGP20KA800 V, 2 A sintered glass passivated junction fast recovery rectifierdistributor-2-65°C175°C60 K
SF20KG800V, 2.0A super fast glass passivated rectifierdistributor-2-55°C150°C33 K
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