| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| EC-20N16 | N-channel lateral MOSFET. High power 250 W. Drain-source voltage 160V. Storage temperature range. | distributor | TO3 | 3 | -55°C | 150°C | 225 K |
| EC-20N16 | N-channel lateral MOSFET. High power 250 W. Drain-source voltage 160V. Storage temperature range. | distributor | TO3PBL | 3 | -55°C | 150°C | 225 K |
| EC-20N20 | N-channel lateral MOSFET. High power 250 W. Drain-source voltage 200V. Storage temperature range. | distributor | TO3 | 3 | -55°C | 150°C | 225 K |
| EC-20N20 | N-channel lateral MOSFET. High power 250 W. Drain-source voltage 200V. Storage temperature range. | distributor | TO3PBL | 3 | -55°C | 150°C | 225 K |
| STD20N03L | Power dissipation 80 W Transistor polarity N Channel Current Id cont. 20 A Current Idm pulse 80 A Voltage Vgs th max. 2.5 V Voltage Vds max 30 V Resistance Rds on 0.022 R Temperature current 25 ?C | SGS-Thomson-Microelectronics | - | - | - | - | 105 K |
| TP2520N8 | 200V P-channel enhancement-mode vertical DMOS FET | distributor | - | 3 | -55°C | 150°C | 456 K |
| VT20N1 | Photoconductive cell | distributor | - | 2 | -40°C | 75°C | 1 M |
| VT20N2 | Photoconductive cell | distributor | - | 2 | -40°C | 75°C | 1 M |
| VT20N3 | Photoconductive cell | distributor | - | 2 | -40°C | 75°C | 1 M |
| VT20N4 | Photoconductive cell | distributor | - | 2 | -40°C | 75°C | 1 M |
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