Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
---|
CT20VM-8 | 130A power mosfet for high-speed switching use | Mitsubishi-Electric-Corporation-Semiconductor-Group | - | 4 | -55°C | 150°C | 24 K |
CT20VML-8 | 130A insulated gate bipolar transistor for strobe flasher use | Mitsubishi-Electric-Corporation-Semiconductor-Group | - | 4 | -55°C | 150°C | 23 K |
CT20VS-8 | 130A power mosfet for high-speed switching use | Mitsubishi-Electric-Corporation-Semiconductor-Group | - | 4 | -55°C | 150°C | 25 K |
CT20VSL-8 | 130A insulated gate bipolar transistor for strobe flasher use | Mitsubishi-Electric-Corporation-Semiconductor-Group | - | 4 | -55°C | 150°C | 23 K |
CY7C1049-20VC | 20ns, 512Kx8 static RAM (SRAM) | Cypress-Semiconductor | SO | 36 | 0°C | 70°C | 224 K |
CY7C1049-20VI | 20ns, 512Kx8 static RAM (SRAM) | Cypress-Semiconductor | SO | 36 | -40°C | 85°C | 224 K |
CY7C1049-20VM | 20ns, 512Kx8 static RAM (SRAM) | Cypress-Semiconductor | SO | 36 | -40°C | 125°C | 224 K |
CY7C1049L-20VC | 20ns, 512Kx8 static RAM (SRAM) | Cypress-Semiconductor | SO | 36 | 0°C | 70°C | 224 K |
CY7C1049L-20VI | 20ns, 512Kx8 static RAM (SRAM) | Cypress-Semiconductor | SO | 36 | -40°C | 85°C | 224 K |
FX20VSJ-3 | 20A power mosfet for high-speed switching use | Mitsubishi-Electric-Corporation-Semiconductor-Group | - | 4 | -55°C | 150°C | 45 K |
<< [15] [16] [17] [18] [19] 20 [21] [22] [23] [24] [25] >> |
---|