| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| CY7C1020L-20VC | 32K x 16 static RAM, 20ns | Cypress-Semiconductor | SOJ | 44 | 0°C | 70°C | 183 K |
| CY7C1320V18-167BZC | 18-Mb DDR-II SRAM two-word burst architecture, 167MHz | Cypress-Semiconductor | FBGA | 165 | 0°C | 70°C | 442 K |
| CY7C1320V18-200BZC | 18-Mb DDR-II SRAM two-word burst architecture, 200MHz | Cypress-Semiconductor | FBGA | 165 | 0°C | 70°C | 442 K |
| CY7C1320V18-250BZC | 18-Mb DDR-II SRAM two-word burst architecture, 250MHz | Cypress-Semiconductor | FBGA | 165 | 0°C | 70°C | 442 K |
| CY7C1320V18-300BZC | 18-Mb DDR-II SRAM two-word burst architecture, 300MHz | Cypress-Semiconductor | FBGA | 165 | 0°C | 70°C | 442 K |
| CY7C199C–20VC | 32K x 8 static RAM, 20ns | Cypress-Semiconductor | SOJ | 28 | 0°C | 70°C | 117 K |
| FQD18N20V2 | 200V N-Channel MOSFET | Fairchild-Semiconductor | - | - | - | - | 615 K |
| FQP18N20V2 | 200V N-Channel MOSFET | Fairchild-Semiconductor | - | - | - | - | 793 K |
| FQU18N20V2 | 200V N-Channel MOSFET | Fairchild-Semiconductor | - | - | - | - | 615 K |
| HPR120V/H | DC/DC converter, input 24V, output 15V | distributor | DIP | 13 | -25°C | 85°C | 352 K |
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