| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| AM29DL800BB120WBC | 8 megabit CMOS 3.0 volt-only, simultaneous operation flash memory | AMD-Advanced-Micro-Devices | FBGA | 48 | 0°C | 70°C | 580 K |
| AM29DL800BB120WBCB | 8 megabit CMOS 3.0 volt-only, simultaneous operation flash memory | AMD-Advanced-Micro-Devices | FBGA | 48 | 0°C | 70°C | 580 K |
| AM29DL800BT120WBC | 8 megabit CMOS 3.0 volt-only, simultaneous operation flash memory | AMD-Advanced-Micro-Devices | FBGA | 48 | 0°C | 70°C | 580 K |
| AM29DL800BT120WBCB | 8 megabit CMOS 3.0 volt-only, simultaneous operation flash memory | AMD-Advanced-Micro-Devices | FBGA | 48 | -55°C | 125°C | 580 K |
| AM29DL800BT120WBIB | 8 megabit CMOS 3.0 volt-only, simultaneous operation flash memory | AMD-Advanced-Micro-Devices | FBGA | 48 | -40°C | 85°C | 580 K |
| BAS20W-T3 | Surface mount fast switching diode | distributor | - | 2 | -65°C | 150°C | 45 K |
| BAS20W-T3 | Surface mount fast switching diode | distributor | - | 2 | -65°C | 150°C | 45 K |
| BAS20W-T3 | Surface mount fast switching diode | distributor | - | 2 | -65°C | 150°C | 45 K |
| IRG4BC20W-S | Insulated gate bipolar transistor. VCES = 600V, VCE(on)typ. = 2.16V @ VGE = 15V, IC = 6.5A | International-Rectifier | DDPak | 3 | -55°C | 150°C | 152 K |
| PRN10220W221/331G | Dual termination network | California-Micro-Devices | SOIC | 20 | 0°C | 70°C | 43 K |
| SML20W65 | 200V Vdss N-Channel FET (field effect transistor) | Semelab-Plc- | TO267 | - | - | - | 26 K |
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