| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| MTD20N03HDL | HDTMOS E-FET high density power FET D2PAK for surface mount | Motorola | DPAK | 4 | -55°C | 150°C | 250 K |
| MTD20N06HD | HDTMOS E-FET power field effect transistor D2PAK for surface mount | Motorola | DPAK | 4 | -55°C | 150°C | 274 K |
| MTD20N06HDL | HDTMOS E-FET high density power FET D2PAK for surface mount | Motorola | DPAK | 4 | -55°C | 150°C | 293 K |
| MTD20N06V | TMOS V power field effect transistor D2PAK for surface mount | Motorola | DPAK | 4 | -55°C | 175°C | 257 K |
| MTP20N06V | TMOS V power field effect transistor | Motorola | - | 4 | -55°C | 175°C | 209 K |
| PHB20N06T | 55 V, N-channel trenchMOS transistor | Philips-Semiconductors | SOT | 3 | -55°C | 175°C | 334 K |
| PHD20N06T | 55 V, N-channel trenchMOS transistor | Philips-Semiconductors | SOT | 3 | -55°C | 175°C | 307 K |
| PHP20N06T | 55 V, N-channel trenchMOS transistor | Philips-Semiconductors | SOT | 3 | -55°C | 175°C | 334 K |
| STD20N03L | Power dissipation 80 W Transistor polarity N Channel Current Id cont. 20 A Current Idm pulse 80 A Voltage Vgs th max. 2.5 V Voltage Vds max 30 V Resistance Rds on 0.022 R Temperature current 25 ?C | SGS-Thomson-Microelectronics | - | - | - | - | 105 K |
| STD20N06 | TRANSISTOR MOSFET TO-252 | SGS-Thomson-Microelectronics | - | - | - | - | 174 K |
| [1] 2 [3] [4] |
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