| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| 2SD2100 | NPN epitaxial planar silicon transistor, compact motor driver application | SANYO-Electric-Co--Ltd- | 2038 | 3 | - | - | 114 K |
| AD22100 | Voltage Output Temperature Sensor with Signal Conditioning | Analog-Devices | - | - | - | - | 230 K |
| LC372100PM-10LV | 2MEG (262144words x 8bit) mask ROM internal clocked silicon gate | SANYO-Electric-Co--Ltd- | SOP32 | 32 | 0°C | 70°C | 79 K |
| LC372100PP-10LV | 2MEG (262144words x 8bit) mask ROM internal clocked silicon gate | SANYO-Electric-Co--Ltd- | DIP32 | 32 | 0°C | 70°C | 79 K |
| LC372100PP-20LV | 2MEG (262144words x 8bit) mask ROM internal clocked silicon gate | SANYO-Electric-Co--Ltd- | DIP32 | 32 | 0°C | 70°C | 79 K |
| LC372100PT-10LV | 2MEG (262144words x 8bit) mask ROM internal clocked silicon gate | SANYO-Electric-Co--Ltd- | TSOP32 | 32 | 0°C | 70°C | 79 K |
| LC372100PT-20LV | 2MEG (262144words x 8bit) mask ROM internal clocked silicon gate | SANYO-Electric-Co--Ltd- | TSOP32 | 32 | 0°C | 70°C | 79 K |
| NE321000 | A GaAs HJ-FET chip for ultra low-noise high-gain amplification | NEC-Electronics-Inc- | Chip | - | - | - | 48 K |
| UPD22100C | 4 x 4 CROSSPOINT SWITCH WITH CCONTROL MEMORY | NEC-Electronics-Inc- | - | - | - | - | 151 K |
| UPD22100GS | 4 x 4 CROSSPOINT SWITCH WITH CCONTROL MEMORY | NEC-Electronics-Inc- | - | - | - | - | 151 K |
| [1] [2] 3 [4] [5] [6] [7] [8] [9] [10] |
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