Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
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MB84VA2106-10 | MCP (multi-chip package) flash memory & SRAM 16M(x16) flash memory & 1M(x8) static RAM | Fujitsu-Microelectronis | plastic FBGA | 48 | -20°C | 85°C | 423 K |
MPC2106SG66 | 256KB and 512KB burstRAM secondary cache module | Motorola | Gold Pad SIMM | 182 | 0°C | 70°C | 228 K |
NJM2106M | Active bass expander | New-Japan-Radio-Co--Ltd--JRC | DMP | 16 | -20°C | 70°C | 367 K |
ZVN2106A | N-channel enhancement mode vertical DMOS FET | Zetex-Semiconductor | - | 3 | -55°C | 150°C | 47 K |
ZVN2106A | N-channel enhancement mode vertical DMOS FET | Zetex-Semiconductor | - | 3 | -55°C | 150°C | 47 K |
ZVN2106G | N-channel enhancement mode vertical DMOS FET | Zetex-Semiconductor | SOT | 3 | -55°C | 150°C | 30 K |
ZVN2106G | N-channel enhancement mode vertical DMOS FET | Zetex-Semiconductor | SOT | 3 | -55°C | 150°C | 30 K |
ZVP2106A | P-channel enhancement mode vertical DMOS FET | Zetex-Semiconductor | - | 3 | -55°C | 150°C | 51 K |
ZVP2106A | P-channel enhancement mode vertical DMOS FET | Zetex-Semiconductor | - | 3 | -55°C | 150°C | 51 K |
ZVP2106G | P-channel enhancement mode vertical DMOS FET | Zetex-Semiconductor | SOT | 3 | -55°C | 150°C | 72 K |
ZVP2106G | P-channel enhancement mode vertical DMOS FET | Zetex-Semiconductor | SOT | 3 | -55°C | 150°C | 72 K |
[1] [2] 3 [4] [5] [6] [7] [8] [9] [10] |
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