| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| M62212GP | General purpose DC-DC converter | Mitsubishi-Electric-Corporation-Semiconductor-Group | DIP | 8 | -20°C | 85°C | 52 K |
| MGFS45V2123A | 2.1-2.3GHz band 32W internally matched GaAs fet | Mitsubishi-Electric-Corporation-Semiconductor-Group | - | 3 | - | - | 48 K |
| RF2125P | High power linear amplifier | RF-Micro-Devices-RFMD | SOIC | 8 | -40°C | 85°C | 51 K |
| RF2125PPCBA | High power linear amplifier | RF-Micro-Devices-RFMD | SOIC | 8 | -40°C | 85°C | 51 K |
| RF2126 | High power linear amplifier | RF-Micro-Devices-RFMD | SOIC | 8 | -40°C | 85°C | 57 K |
| RF2126PCBA | High power linear amplifier | RF-Micro-Devices-RFMD | SOIC | 8 | -40°C | 85°C | 57 K |
| RF2127 | Medium power linear amplifier | RF-Micro-Devices-RFMD | SOIC | 8 | -40°C | 85°C | 63 K |
| RF2127PCBA | Medium power linear amplifier | RF-Micro-Devices-RFMD | SOIC | 8 | -40°C | 85°C | 63 K |
| RF2128P | Medium power linear amplifier | RF-Micro-Devices-RFMD | PSOP | 8 | -40°C | 85°C | 134 K |
| RF2128PPCBA | Medium power linear amplifier | RF-Micro-Devices-RFMD | PSOP | 8 | -40°C | 85°C | 134 K |
| << [271] [272] [273] [274] [275] 276 [277] [278] [279] [280] [281] >> |
|---|
