| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| 2SC1213A | 400mW NPN silicon transistor | distributor | - | 3 | -55°C | 150°C | 67 K |
| AT65-0213TR | DC-3 GHz, digital attenuator, 15 dB, 4-bit, TTL driver | M-A-COM---manufacturer-of-RF | SOW | 16 | -40°C | 85°C | 210 K |
| BC213L | 300mW PNP silicon planar epitaxial transistor | distributor | - | 3 | -55°C | 150°C | 88 K |
| KA2131 | DC volume, tone control circuit | Samsung-Electronic | SIP | 9 | -20°C | 70°C | 96 K |
| KA2133 | 1-chip deflection system | Samsung-Electronic | DIP | 16 | -20°C | 75°C | 95 K |
| KA2135 | Horizontal signal processing | Samsung-Electronic | SIP | 12 | -20°C | 70°C | 116 K |
| KA2138N | Deflection processor for CRT display | Samsung-Electronic | DPI | 20 | -20°C | 70°C | 114 K |
| KA22134 | Dual pre-power amplifier | Samsung-Electronic | DIP | 16 | -20°C | 75°C | 111 K |
| LS7213-S | Programmable digital delay timer | distributor | SOIC | 14 | -20°C | 85°C | 45 K |
| TN2130K1 | 300V N-channel enhancement-mode vertical DMOS FET | distributor | - | 3 | -55°C | 150°C | 454 K |
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