Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
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2SK2134 | N-channel power MOS FET for high voltage switching applications | NEC-Electronics-Inc- | - | 3 | -55°C | 150°C | 54 K |
2SK2134-Z | N-channel power MOS FET for high voltage switching applications | NEC-Electronics-Inc- | - | 4 | -55°C | 150°C | 54 K |
BC213L | ft min 200 MHz hfe min 80 Transistor polarity PNP Current Ic continuous max 0.2 A Voltage Vcbo 45 V Voltage Vceo 30 V Current Ic (hfe) 2 mA Power Ptot 625 mW | Fairchild-Semiconductor | - | - | - | - | 36 K |
IL213A | 6V; 60mA small outline optically coupled isolator transistor output | distributor | SOIC | 8 | -55°C | 100°C | 47 K |
KA2139 | 3 channel RGB video amplifier for CRT display | Samsung-Electronic | DIP | 28 | -20°C | 70°C | 90 K |
LS7213-S | Programmable digital delay timer | distributor | SOIC | 14 | 0°C | 70°C | 43 K |
R5020213LSWA | 200V, 125A fast recovery single diode | distributor | - | - | - | - | 491 K |
R5021213LSWA | 1200V, 125A fast recovery single diode | distributor | - | - | - | - | 491 K |
uPD77213F1-xxx-DA2 | 16-bit fixed-point digital signal processor, 120 MHz, internal instruction memory: RAM 15.5 Kwords x 32 bits ROM 64 Kwords x 32 bits, data memory: RAM 18 Kwords x 16 bits x 2 planes (X and Y data memories) (xxx - indicates ROM code suffix) | NEC-Electronics-Inc- | BGA | 161 | -20°C | 70°C | 467 K |
uPD77213GJ-xxx-8EN | 16-bit fixed-point digital signal processor, 120 MHz, internal instruction memory: RAM 15.5 Kwords x 32 bits ROM 64 Kwords x 32 bits, data memory: RAM 18 Kwords x 16 bits x 2 planes (X and Y data memories) (xxx - indicates ROM code suffix) | NEC-Electronics-Inc- | LQFP | 144 | -20°C | 70°C | 467 K |
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