| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| 2PB1219AR | PNP general purpose transistor. | Philips-Semiconductors | SOT323 | 3 | -65°C | 150°C | 45 K |
| 2PB1219AR | PNP general purpose transistor. | Philips-Semiconductors | - | 3 | -65°C | 150°C | 45 K |
| 2PB1219AS | PNP general purpose transistor. | Philips-Semiconductors | SOT323 | 3 | -65°C | 150°C | 45 K |
| 2PB1219AS | PNP general purpose transistor. | Philips-Semiconductors | - | 3 | -65°C | 150°C | 45 K |
| KM110BH/2190 | Angle sensor hybrid. | Philips-Semiconductors | - | 3 | -40°C | 125°C | 84 K |
| L2195 | 7.5A; 20V; high precision lamp housing E7536: for 150W xenon lamps and mercury-xenon lamps | distributor | - | 2 | 0°C | 30°C | 67 K |
| MD5219R | Red LED modulite (recommended for LCD backlight). Max. luminous intensity at 20mA 12.5mcd. Typ. forward voltage at 20mA 4.50V. | distributor | - | 2 | - | - | 183 K |
| SA5219D | Wideband variable gain amplifier. | Philips-Semiconductors | SO | 16 | -40°C | 85°C | 238 K |
| SA5219D | Wideband variable gain amplifier. | Philips-Semiconductors | - | 16 | -40°C | 85°C | 238 K |
| SA5219N | Wideband variable gain amplifier. | Philips-Semiconductors | - | 16 | -40°C | 85°C | 238 K |
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