| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| 5962H9652201VCA | RadHard MSI: SMD. Triple 3-input AND gates. Class V, QML. Lead finish solder. Total dose 1E6 rads(Si). | distributor | Ceramic DIP | 14 | -55°C | 125°C | 10 M |
| 5962H9652201VCC | RadHard MSI: SMD. Triple 3-input AND gates. Class V, QML. Lead finish gold. Total dose 1E6 rads(Si). | distributor | Ceramic DIP | 14 | -55°C | 125°C | 10 M |
| 5962H9652201VCX | RadHard MSI: SMD. Triple 3-input AND gates. Class V, QML. Lead finish optional. Total dose 1E6 rads(Si). | distributor | Ceramic DIP | 14 | -55°C | 125°C | 10 M |
| 5962H9652201VXA | RadHard MSI: SMD. Triple 3-input AND gates. Class V, QML. Lead finish solder. Total dose 1E6 rads(Si). | distributor | Ceramic flatpack | 14 | -55°C | 125°C | 10 M |
| APM4220KC-TR | 25 V, N-channel enhancement mode MOSFET | distributor | - | 8 | -55°C | 150°C | 125 K |
| APM4220KC-TRL | 25 V, N-channel enhancement mode MOSFET | distributor | - | 8 | -55°C | 150°C | 125 K |
| APM4220KC-TU | 25 V, N-channel enhancement mode MOSFET | distributor | - | 8 | -55°C | 150°C | 125 K |
| APM4220KC-TUL | 25 V, N-channel enhancement mode MOSFET | distributor | - | 8 | -55°C | 150°C | 125 K |
| M22007 | Power thermistor | distributor | - | 2 | -40°C | 200°C | 796 K |
| THM322020S-10 | 100 ns, 32-bit dynamic RAM module | Toshiba | - | 72 | 0°C | 70°C | 477 K |
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