Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
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2211-50A | Delay 50 +/-2.5 ns, fixed DIP delay line Td/Tr=10 | distributor | DIP | 24 | -55°C | 125°C | -- |
2211-50B | Delay 50 +/-2.5 ns, fixed DIP delay line Td/Tr=10 | distributor | DIP | 24 | -55°C | 125°C | -- |
2211-50D | Delay 50 +/-2.5 ns, fixed DIP delay line Td/Tr=10 | distributor | DIP | 24 | -55°C | 125°C | -- |
2211-60A | Delay 60 +/-3 ns, fixed DIP delay line Td/Tr=10 | distributor | DIP | 24 | -55°C | 125°C | -- |
2211-60B | Delay 60 +/-3 ns, fixed DIP delay line Td/Tr=10 | distributor | DIP | 24 | -55°C | 125°C | -- |
2211-80A | Delay 80 +/-4 ns, fixed DIP delay line Td/Tr=10 | distributor | DIP | 24 | -55°C | 125°C | -- |
2211-80B | Delay 80 +/-4 ns, fixed DIP delay line Td/Tr=10 | distributor | DIP | 24 | -55°C | 125°C | -- |
F2211 | 15 Watt, Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor | distributor | - | 4 | -65°C | 150°C | 35 K |
F2212 | 8 Watt, Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor | distributor | - | 2 | -65°C | 150°C | 35 K |
F2213 | 16 Watt, Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor | distributor | - | 4 | -65°C | 150°C | 36 K |
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