| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| 2SD2215 | Silicon NPN triple diffusion planar type power transistor | Panasonic---Semiconductor-Company-of-Matsushita-Electronics-Corporation | - | - | - | - | 49 K |
| 2SD2215A | Silicon NPN triple diffusion planar type power transistor | Panasonic---Semiconductor-Company-of-Matsushita-Electronics-Corporation | - | - | - | - | 49 K |
| 2SK2211 | Silicon N-Channel MOS FET | Panasonic---Semiconductor-Company-of-Matsushita-Electronics-Corporation | - | - | - | - | 33 K |
| MIP0221SY | Intelligent Power Device (IPD) | Panasonic---Semiconductor-Company-of-Matsushita-Electronics-Corporation | - | - | - | - | 34 K |
| UNR2210 | Silicon NPN epitaxial planer transistor with biult-in resistor | Panasonic---Semiconductor-Company-of-Matsushita-Electronics-Corporation | - | - | - | - | 235 K |
| UNR2211 | Silicon NPN epitaxial planer transistor with biult-in resistor | Panasonic---Semiconductor-Company-of-Matsushita-Electronics-Corporation | - | - | - | - | 235 K |
| UNR2212 | Silicon NPN epitaxial planer transistor with biult-in resistor | Panasonic---Semiconductor-Company-of-Matsushita-Electronics-Corporation | - | - | - | - | 235 K |
| UNR2213 | Silicon NPN epitaxial planer transistor with biult-in resistor | Panasonic---Semiconductor-Company-of-Matsushita-Electronics-Corporation | - | - | - | - | 235 K |
| UNR2214 | Silicon NPN epitaxial planer transistor with biult-in resistor | Panasonic---Semiconductor-Company-of-Matsushita-Electronics-Corporation | - | - | - | - | 235 K |
| UNR2215 | Silicon NPN epitaxial planer transistor with biult-in resistor | Panasonic---Semiconductor-Company-of-Matsushita-Electronics-Corporation | - | - | - | - | 235 K |
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