| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| F2246 | 2 Watt, Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor | distributor | - | 6 | -65°C | 150°C | 33 K |
| F2247 | 4 Watt, Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor | distributor | - | 6 | -65°C | 150°C | 33 K |
| F2248 | 8 Watt, Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor | distributor | - | 6 | -65°C | 150°C | 35 K |
| OM5224SA | 24Amp high efficiency, center-tap rectifier | distributor | - | 7 | -55°C | 150°C | 34 K |
| OP224SCC-B1 | High reliability GaAlAs infrared emitting diode | distributor | - | - | -55°C | 125°C | 223 K |
| OP224SCC-B2 | High reliability GaAlAs infrared emitting diode | distributor | - | - | -55°C | 125°C | 223 K |
| OP224SCC-B3 | High reliability GaAlAs infrared emitting diode | distributor | - | - | -55°C | 125°C | 223 K |
| OP224SCC-C1 | High reliability GaAlAs infrared emitting diode | distributor | - | - | -55°C | 125°C | 223 K |
| OP224SCC-C2 | High reliability GaAlAs infrared emitting diode | distributor | - | - | -55°C | 125°C | 223 K |
| OP224SCC-C3 | High reliability GaAlAs infrared emitting diode | distributor | - | - | -55°C | 125°C | 223 K |
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