| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| 1N5229B | 500 milliwatts glass silicon zener diode, zener voltage 4.3V | Motorola | - | 2 | -65°C | 200°C | 424 K |
| CHA2291-99F/00 | 10-18GHz low noise, variable gain amplifier | distributor | Chip | 17 | -40°C | 85°C | 136 K |
| CHA2292-99F/00 | 17-24GHz low noise, variable gain amplifier | distributor | Chip | 16 | -40°C | 85°C | 136 K |
| CHA2293-99F/00 | 24.5-29.5GHz low noise, variable gain amplifier | distributor | Chip | 16 | -40°C | 85°C | 160 K |
| CHA2294-99F/00 | 35-40GHz low noise, variable gain amplifier | distributor | Chip | 16 | -40°C | 85°C | -- |
| CHA2295-99F/00 | 6-11GHz buffer splitter amplifier | distributor | Chip | 13 | -40°C | 85°C | 114 K |
| CHA2296-99F/00 | 9-19GHz buffer splitter amplifier | distributor | Chip | 13 | -40°C | 85°C | 111 K |
| CHR2291-99F/00 | 12-17GHz integrated down converter. | distributor | Chip | - | -40°C | 85°C | 121 K |
| CHR2293-99F/00 | 20-24GHz integrated down converter | distributor | Chip | 17 | -40°C | 85°C | 97 K |
| CHR2296-99F/00 | 36-40GHz integrated down converter | distributor | Chip | 17 | -40°C | 85°C | 119 K |
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