| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| 2N2325 | 150V Silicon thyristor | distributor | - | 3 | -65°C | 125°C | 98 K |
| HM5212325FBP-B60 | 128M LVTTL interface SDRAM 100MHz, 1-Mword x 32-bit x 4-bank | distributor | BGA | 108 | 0°C | 70°C | 62 K |
| HM5212325FBPC-B60 | 128M LVTTL interface SDRAM 100 MHz 1-Mword x 32-bit x 4-bank | distributor | FBGA | 90 | 0°C | 70°C | 58 K |
| M52325AP | SECAM decoder | Mitsubishi-Electric-Corporation-Semiconductor-Group | DIL | 16 | -10°C | 70°C | 80 K |
| MGFS45V2325A | 2.3-2.5GHz band 32W internally matched GaAs fet | Mitsubishi-Electric-Corporation-Semiconductor-Group | - | 3 | - | - | 48 K |
| MSC23CV23257A-70BS4 | 2,097,152-word x 32-bit dynamic RAM module | distributor | Small outline DIMM | 72 | 0°C | 70°C | 64 K |
| MSC23V23258D-60BS4 | 2,097,152 word x 32 bit dynamic RAM module | distributor | DIMM | 100 | 0°C | 70°C | 373 K |
| MSC23V23258D-70BS4 | 2,097,152 word x 32 bit dynamic RAM module | distributor | DIMM | 100 | 0°C | 70°C | 373 K |
| RF2325 | 3V general purpose amplifier | RF-Micro-Devices-RFMD | SOT | 5 | -40°C | 85°C | 245 K |
| RF2325PCBA | 3V general purpose amplifier | RF-Micro-Devices-RFMD | SOT | 5 | -40°C | 85°C | 245 K |
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