Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
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AGM1232E-NEGH-T | 0.3-7.0V; 13.0mA; 20characters; dot size:0.40 x 0.45mm; dot pitch:0.44 x 0.49mm; liquid crystal display | distributor | - | - | -20°C | 70°C | 134 K |
K4S643232E-TC50 | 512K x 32bit x 4 banks synchronous DRAM LVTTL, 3.3V, 200MHz | Samsung-Electronic | TSOP II | 86 | 0°C | 70°C | 102 K |
K4S643232E-TC55 | 512K x 32bit x 4 banks synchronous DRAM LVTTL, 3.3V, 183MHz | Samsung-Electronic | TSOP II | 86 | 0°C | 70°C | 102 K |
K4S643232E-TC60 | 512K x 32bit x 4 banks synchronous DRAM LVTTL, 3.3V, 166MHz | Samsung-Electronic | TSOP II | 86 | 0°C | 70°C | 102 K |
K4S643232E-TC70 | 512K x 32bit x 4 banks synchronous DRAM LVTTL, 3.3V, 143MHz | Samsung-Electronic | TSOP II | 86 | 0°C | 70°C | 102 K |
K4S643232E-TL45 | 512K x 32bit x 4 banks synchronous DRAM LVTTL, 3.3V, 222MHz | Samsung-Electronic | TSOP II | 86 | 0°C | 70°C | 102 K |
K4S643232E-TL50 | 512K x 32bit x 4 banks synchronous DRAM LVTTL, 3.3V, 200MHz | Samsung-Electronic | TSOP II | 86 | 0°C | 70°C | 102 K |
K4S643232E-TL55 | 512K x 32bit x 4 banks synchronous DRAM LVTTL, 3.3V, 183MHz | Samsung-Electronic | TSOP II | 86 | 0°C | 70°C | 102 K |
K4S643232E-TL60 | 512K x 32bit x 4 banks synchronous DRAM LVTTL, 3.3V, 166MHz | Samsung-Electronic | TSOP II | 86 | 0°C | 70°C | 102 K |
K4S643232E-TL70 | 512K x 32bit x 4 banks synchronous DRAM LVTTL, 3.3V, 143MHz | Samsung-Electronic | TSOP II | 86 | 0°C | 70°C | 102 K |
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