| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| 5962-0323601QXA | 128K x 32 SRAM: SMD. 15ns access time. Class Q. Lead finish hot solder dipped. | distributor | Ceramic flatpack | 68 | -55°C | 125°C | 180 K |
| EL2360CN | Triple 130MHz current feedback amplifier | distributor | PDIP | 16 | -40°C | 85°C | 417 K |
| EL2360CS | Triple 130MHz current feedback amplifier | distributor | SOIC | 16 | -40°C | 85°C | 417 K |
| MAX2360ECM | Complete dual-band quadrature transmitter | Maxim-Integrated-Producs | - | 48 | -40°C | 85°C | 324 K |
| MJE2360T | 350V NPN silicon high-voltage transistor | distributor | - | 3 | -65°C | 150°C | 84 K |
| NTE2360 | Silicon complementary PNP transistor. Digital w/2 built-in 47k bias resistors. | distributor | TO92 | 3 | 0°C | 150°C | 24 K |
| RF2360 | Linear general purpose amplifier | RF-Micro-Devices-RFMD | SB | 16 | -40°C | 85°C | 269 K |
| RF2360 411 | Linear general purpose amplifier | RF-Micro-Devices-RFMD | SB | 16 | -40°C | 85°C | 269 K |
| RF2360 412 | Linear general purpose amplifier | RF-Micro-Devices-RFMD | SB | 16 | -40°C | 85°C | 269 K |
| RF2360PCBA | Linear general purpose amplifier | RF-Micro-Devices-RFMD | SB | 16 | -40°C | 85°C | 269 K |
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